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LED Chips, Phosphors, Optics, Drivers News

Time: 2012-9-8 10:30:26  |  Source:Greenergy technology co., ltd  |  Author: admin

Intematix Claims Remote Phosphor Performance Improvement of 10%
LIGHTimes News Staff


December 3, 2012...Intematix, an innovator of patented phosphors for LED lighting based in Fremont, California, announced performance improvements in its ChromaLit™ Ellipse, Candle and Dome remote phosphor products. The company said that the enhancements reflect its continuous advancements in remote phosphor technology resulting in an average ten percent increase in light output and reduced system cost for lighting system manufacturers.

Intematix boasts that its remote phosphors convert light from blue LEDs into white light with up to 30 percent higher efficacy than conventional white LEDs. Furthermore, the company claims that its ChromaLit products provide up to 225 lumens per blue radiant watt with a CRI above 95 and color consistency within 2 SDCM.

  “Higher lumens-per-watt means fewer LEDs and smaller heat-sinks in our customers’ products,” said Herb Schlegel, senior director of product marketing at Intematix. “While lowering costs, our ChromaLit Candle and Dome products also improve light quality and uniformity in applications like light bulbs, pendants and sconces.”    

ChromaLit 360 products are now available through Intematix sales and distribution partners Future Lighting Solutions, Arrow Electronics and Digi-Key Corporation.  

Deep Ultraviolet LED Fabricated on AlN Substrate
LIGHTimes News Staff

November 29, 2012...Researchers from Japan and the USA reported the fabrication of aluminum gallium nitride (AlGaN) LEDs that emit at a wavelength of 268nm, a deep-ultraviolet (DUV) wavelength. The Japanese organizations involved were Tokuyama Corp, Kobe University, Tokyo University of Agriculture and Technology, and the National Institute of Information and Communications Technology. They were joined by US company HexaTech Inc and North Carolina State University.[Toru Kinoshita et al, Appl. Phys. Express, vol5, p122101, 2012].

DUV light around 265 nm can disrupt biological processes and can therefore be used for air and water purification. However, DUV LEDs are not very efficient so far. The researchers noted that while the majority of work on DUV LEDs is done on sapphire substrates, large lattice mismatches create dislocations that reduce energy efficiency down to merely about 2 percent.

The researchers successfully fabricated the DUV-LEDs on AlN substrates, which were prepared by growing thick hydride vapor phase epitaxy (HVPE)-AlN layers on bulk AlN substrates prepared by physical vapor transport (PVT). The device layers were grown using metal-organic chemical vapor deposition (MOCVD) in an Aixtron AIX200/4RF-S reactor.

Mechanical polishing removed the PVT-AlN substrates after the DUV LED structures were grown. The polishing reduced the amount of DUV absorption. The resulting layer was estimated to be 170μm thick. LIGHTimes SecondPage members login for more. Guests can view membership details.

DOE Office of Science Awards SBIR Grants to Applied Nanotech and Universal Display Corporation
LIGHTimes News Staff

November 9, 2012...The U.S. Department of Energy Office of Science has awarded two Small Business Innovation Research (SBIR) grants targeting advances in solid-state lighting (SSL) technology. The FY12 Phase I Release 3 awards will explore the technical merit or feasibility of an innovative concept or technology. The SBIR and Small Business Technology Transfer (STTR) program seeks to increase the participation of small businesses in federal R&D. To learn more about this program, visit

Applied Nanotech, Inc. was awarded a Phase I Release 3 award for a proposal titled, "CarbAlTM Based Board for Power LED Packaging". The proposal is for a project which seeks to extend Applied Nanotech's initial success with the company's CarbAl based, high power LED 
circuit board by developing a unique thermal management solution that is two to three times less costly than other solutions. The company expects that additional cost reductions will be achieved with lower cost materials and less complex printing techniques that can be done with less capital-intensive equipment.

Universal Display Corporation (UDC) was also awarded a Phase I Release 3 Small Business Innovation Research (SBIR) grant for its proposal titled, "Novel Low Cost Single Layer Outcoupling Solution for OLED lighting". The UDC team plans to demonstrate External Quantum Efficiencies (EQE) >42 percent, which is an approximate 2X increase in light extraction compared to the highest-efficiency phosphorescent white organic light-emitting diode (WOLED) produced with no outcoupling enhancement. The proposed increase in EQE will be used to demonstrate a 2 mm2 WOLED lighting pixel with efficacy >80 lm/W, CRI >80, and lifetime to LT70 >30,000 hours at 1,000 cd/m2. All of this will be from a lighting system whose total thickness is  ≤3 mm. The proposed performance targets all meet or exceed ENERGY STAR® Category B criteria for SSL. The DOE Office of Science notes that these goals also represent current world record efficacies for WOLEDs with a thin form factor and high-quality CRI, and are important steps towards achieving DOE's target of 140 lm/W in an OLED lighting system.

Bulk GaN to Become Competitive with Silicon in Price Performance Ratio by 2020 with GaN Price Drop, Lux Research Predicts
LIGHTimes News Staff

November 7, 2012...Lux Research forecasts that by 2020 gallium nitride (GaN) costs will drop enough to become competitive with silicon based on performance. The company notes that Bulk GaN costs about $1,900 or more for a two-inch substrate, compared with only $25 to $50 for a far larger six-inch silicon substrate. However, GaN materials offer higher efficiencies than silicon, leading to greater energy savings in devices like power electronics, laser diodes, and light-emitting diodes (LEDs). According to Lux Research, by 2020, the drop in GaN prices will be enough to offset cost disadvantages in terms of the price-to-performance ratio.

"The future of bulk GaN is going to come down to how it faces off against silicon substrates," said Pallavi Madakasira, Lux Research Analyst and the lead author of the report titled, "Price or Performance: Bulk GaN Vies with Silicon for Value in LEDs, Power Electronics and Laser Diodes." "Bulk GaN wins in laser diodes and it can become relevant in LEDs and power electronics by boosting yield and performance." LIGHTimes SecondPage members login for more. Guests can view membership details.

NGK Insulators Claims Achievement of Nearly Double Green LED Luminous Efficiency with GaN Wafers
LIGHTimes News Staff

November 5, 2012... NGK Insulators, Ltd. based in Nagoya, Japan, has developed gallium nitride (GaN) wafers that they claim roughly double the luminous efficiency of green LEDs over previous models. NGK achieved this using a proprietary approach to reduce defect density with liquid phase epitaxial technology for single crystal growth. The company says that the GaN wafers have low defect density across their entire 2-inch diameter and have a colorless transparency.

According to the company's joint research carried out with Nagoya University, green LED chips formed on the NGK GaN wafers showed a 60% internal quantum efficiency (injection current density of approximately 200 amperes per square centimeter). The company notes that this is roughly double that of the green LED chips currently on the market. The results were jointly announced at the International Workshop on Nitride Semiconductors 2012 (IWN 2012) held in Sapporo, Hokkaido (Japan) from October 14-19, 2012. LIGHTimes SecondPage members login for more. Guests can view membership details.

Nichia Looking to Taiwan Joint Venture to Help Expand in Mainland China
LIGHTimes News Staff

November 2, 2012...Japan-based LED chip maker, Nichia Corporation, is reportedly considering cooperating with Taiwanese firms for further development, according to a Cens article. Specifically, Nichia is looking to form a joint venture with two Taiwanese companies, namely Hon Hai Group, a contract electronics manufacturer, and Epistar Corporation, an epitaxial supplier in Taiwan and member of Nichia’s supply chain.

Despite spending about $1.33 billion to expand production lines and establish sales footholds in China this year, many Chinese companies refuse to choose LED components from Japan, the article indicated. These companies are apparently influenced by anti-Japan sentiments due to the sovereignty of the Diaoyutai islet. Nichia has reportedly planned to extend distributorships in Guangzhou, Southern China, as well as increase production capacities 20% there. Nichia's solution for anti-Japan sentiment is apparently to form a joint venture with these Taiwan-based companies to give the company access to distribution channels within Taiwan and the Chinese mainland.

Fraen Corporation Issued New Patent for Reflective Variable Spot FOCOS Technology
LIGHTimes News Staff

November 1, 2012...Fraen Corporation of Reading, Massachusetts USA, reported that the United States Patent and Trademark Office has issued U.S. Patent 8,118,451 entitled “Reflective Variable Spot Size Lighting Devices and Systems”. The system, known as FOCOS (FOCusing Optical System) consists of two reflectors which narrows the beam spread through extension of the outer reflector away from the light source. FOCOS technology has been developed for both narrow beam applications requiring a long throw of light, and up close, wide beam viewing, which requires uniform useable light. Fraen is offering samples of its latest FOCOS technology for the Cree XPE and Luxeon Rebel LEDs to interested customers developing products that require both a narrow beam and a wide beam illumination pattern.

“Since Its introduction, the FOCOS technology has proven to be very popular within the Portable Lighting and General Illumination markets,” said David Cohen, Executive Vice President of Fraen. “ We are pleased to add the FOCOS technology to our growing patent portfolio and to expand the applications of this technology.  Fraen continues to strive to bring innovative technology to the market place and help our customers achieve world class light output.”

Showa Denko to Transfer GaN LED Business to Subsidiary TS Opto and Transfer 70 percent of TS Opto Shares to Toyoda Gosei to Form Joint Venture
LIGHTimes News Staff

October 26, 2012...Showa Denko K. K. (SDK) of Japan decided to split and transfer its gallium nitride (GaN) LED epitaxial wafer/chip business to its wholly owned subsidiary TS Opto Co., Ltd. On Tuesday SDK and TS Opto concluded and absorption company split agreement. SDK previously reached an agreement with Toyoda Gosei Co., Ltd., a maker of GaN LEDs, to establish a joint venture. SDK will transfer its GaN LED business to TS Opto effective December 1, 2012. Also on that date, SDK will transfer 70 percent of its common shares in TS Opto to Toyoda Gosei. The spit makes TS Opto a joint venture between Toyoda Gosei and SDK. Matsakazu Maki will become president of the newly formed joint venture company that will be headquartered in Ichihara City, Chiba Prefecture

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